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| FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES * * * * * Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in WLL and MMDS base station amplifiers as it offers high gain, long term reliability and ease of use. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 125 -65 to +175 +175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with gate resistance of 25. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Drain Current Power-Added Efficiency Thermal Resistance CASE STYLE: IQ Symbol IDSS gm Vp VGSO P1dB G1dB IDSR add Rth Channel to Case VDS = 12V f=2.7 GHz IDS = 4.0A Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 14.4A VDS = 5V, IDS = 1.44A IGS = -1.44mA Min. -1.0 -5 47.0 9.0 Limits Typ. Max. 24 12 -2.0 48.0 10.0 11.0 43 0.8 32 -3.5 15.0 1.2 Unit A S V V dBm dB A % C/W G.C.P.: Gain Compression Point Edition 1.7 December 1999 1 FLL600IQ-3 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 140 120 Total Power Dissipation (W) 100 80 60 40 20 OUTPUT POWER & add vs. INPUT POWER 50 49 47 Output Power (dBm) 45 43 41 39 add 35 33 30 20 10 0 20 22 24 26 28 30 32 34 36 38 40 Input Power (dBm) add (%) 37 40 60 50 VDS = 12.0V IDS = 4.0A f = 2.7GHz Pout 0 50 100 150 200 31 29 Case Temperature (C) OUTPUT POWER vs. FREQUENCY VDS = 12.0V IDS = 4.0A f = 2.7GHz 51 49 47 Output Power (dBm) Pin=40dBm 38dBm 35dBm 45 43 41 39 37 35 2.4 2.5 2.6 Frequency (GHz) 2.7 2.8 30dBm 25dBm 2 FLL600IQ-3 L-Band Medium & High Power GaAs FET OUTPUT POWER vs. IMD VDS = 12V IDS = 4.0A f = 2.7GHz f = 5.0MHz 2-tone test -28 -32 -36 -40 IMD (dBc) IM3 IM5 -44 -48 -52 -56 -60 26 28 30 32 34 36 38 40 42 44 Total Output Power (dBm) S-PARAMETERS VDS = 12V, IDS = 2000mA FREQUENCY (MHZ) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 S11 MAG .978 .974 .972 .962 .961 .952 .944 .933 .924 .901 .881 .853 .816 .778 .736 .704 .636 .579 .508 .439 .439 .562 .700 .755 .723 .648 .579 .477 .318 S21 ANG 178.4 176.4 175.0 173.6 172.5 170.7 168.6 167.0 165.2 162.7 160.4 157.8 155.2 152.9 151.0 148.6 146.2 145.5 145.9 152.3 166.3 172.4 162.6 146.1 126.8 107.1 74.7 26.1 -33.9 S12 ANG MAG .005 .005 .006 .006 .008 .009 .011 .013 .014 .016 .018 .020 .023 .024 .026 .029 .026 .025 .025 .023 .020 .013 .013 .016 .021 .026 .034 .040 .038 S22 ANG MAG .807 .895 .896 .886 .873 .866 .858 .844 .832 .823 .814 .815 .818 .828 .843 .864 .871 .887 .876 .843 .782 .697 .661 .692 .748 .805 .841 .875 .909 MAG .905 .793 .729 .684 .690 .688 .718 .740 .784 .836 .898 .959 1.043 1.116 1.231 1.386 1.566 1.730 1.998 2.278 2.605 2.774 2.675 2.312 1.967 1.649 1.536 1.338 .963 ANG 176.5 175.3 174.9 174.1 173.1 172.4 171.7 171.3 171.1 171.0 171.2 171.7 172.6 172.9 173.3 172.4 171.2 169.9 167.5 164.8 163.6 166.2 173.7 -179.9 -177.1 -176.7 -177.3 -178.6 179.2 76.5 73.0 69.5 66.2 62.2 57.1 51.1 44.6 37.5 29.6 20.8 11.6 1.3 -10.0 -20.8 -32.8 -47.5 -61.5 -78.1 -97.6 -116.1 -144.5 -173.0 160.3 137.9 119.3 101.2 78.5 58.0 47.5 51.3 61.1 58.1 51.9 51.7 56.7 50.1 46.6 42.9 36.2 28.6 23.3 16.5 7.8 -9.8 -22.1 -30.4 -45.0 -65.2 -94.7 -141.0 137.0 85.1 51.3 37.5 23.2 2.4 -21.5 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. Download S-Parameters, click here 3 FLL600IQ-3 L-Band Medium & High Power GaAs FET Case Style "IQ" 2.5 MIN. 2 1 0.1 (0.004) 8.0 (0.315) 0.2 3 6.0 (0.236) 0.2 2.5 MIN. 4-R1.3 (0.051) 0.15 2.0 (0.079) 4 5 17.4 (0.685) 0.2 2.4 (0.094) 0.13 1.9 (0.075) 16.4 (0.646) 0.2 4.4 Max. 1, 2: Gate 3: Source 4, 5: Drain Unit: mm (inches) 20.4 (0.803) 24.0 (0.945) 0.2 0.2 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 |
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